hexfet 1

Optical image of HEXFET® Power MOSFET.

Breakdown site is located near the source wire bond.
Breakdown site is located near the source wire bond.

The breakdown site is located near the source wire bond.

hexfet 3

This is a higher magnification image of the breakdown site.

The breakdown current in amperes can be roughly estimated by the radius of the “hot spot” or breakdown site [1]. The breakdown current is estimated at ~ 1 amp/1 mil radius.

[1] J. T. May, “Limiting Phenomena in Power Transistors and the Interpretation of EOS Damage”, in Microelectronics Failure Analysis Desk Reference, 3rd Edition, ASM International Press, 1993, pp. 321-328.

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