Case 2234 ยท Public preview
Gate-Lead Damage and Ionic Residue Can Produce Similar MOSFET Failure Symptoms
Power MOSFETs showed open, shorted, or erratic electrical behavior.
Continuity testingChemical decapsulationSEMEDSMicrosectioning
What the evidence preview establishes
The devices showed two credible contributors: mechanical damage at gate leads and associated wire bonds, and ionic residue containing calcium, sulfur, and phosphorus near device surfaces. No die-level electrical-overstress damage was identified.
Why this case matters
Similar semiconductor symptoms can arise from package mechanics and surface chemistry without visible EOS damage. Continuity, bond integrity, die examination, and contaminant chemistry should be reconciled device by device.
Full evidence reserved for MEMBER and STOREThe complete case includes the evidence sequence, four interpreted figures, alternative explanations, limitations, and practical application guidance.