Case 2457 ยท Public preview
A Damaged Gate Connection Can Make a MOSFET Appear Shorted
A MOSFET was reported as intermittently shorted, while three comparison devices also failed one or more electrical parameters.
Continuity testingSpecification testingChemical decapsulationSEMEDSFractography
What the evidence preview establishes
Thermal overstress and fatigue damaged the source and gate aluminum bond wires. An intermittent gate connection could leave charge on the gate capacitance and hold the MOSFET on, creating the appearance of a source-drain short even though its body diode was not shorted.
Why this case matters
Confirm whether a reported semiconductor short is a true junction short or a state-dependent conduction condition. Combine diode checks, gate-discharge behavior, parametric testing, and bond-wire examination before assigning the failure to die-level EOS.
Full evidence reserved for MEMBER and STOREThe complete case includes the evidence sequence, four interpreted figures, alternative explanations, limitations, and practical application guidance.