EOS failure of Power MOSFET

hexfet 1

Optical image of HEXFET® Power MOSFET.

hexfet 2

The breakdown site is located near the source wire bond.

hexfet 3

This is a higher magnification image of the breakdown site.

The breakdown current in amperes can be roughly estimated by the radius of the “hot spot” or breakdown site [1]. The breakdown current is estimated at ~ 1 amp/1 mil radius.

[1] J. T. May, “Limiting Phenomena in Power Transistors and the Interpretation of EOS Damage”, in Microelectronics Failure Analysis Desk Reference, 3rd Edition, ASM International Press, 1993, pp. 321-328.

Check out SEM Lab, Inc.  to learn more.

Leave a Reply

Your email address will not be published. Required fields are marked *